PART |
Description |
Maker |
Q62702-B599 BBY52 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Siemens Group
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BBY51 Q62702-B631 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BBY53-03W Q62702-B0825 BBY5303W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BBY56-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
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SIEMENS AG Infineon Siemens Group SIEMENS[Siemens Semiconductor Group]
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BBY58-02L BBY58-02V BBY58-05W BBY58-06W BBY58-07L4 |
Silicon Tuning Diodes 硅调谐二极管 SHOWCASE CABINET 硅调谐二极管 Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
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INFINEON[Infineon Technologies AG]
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BBY66 BBY66-05W BBY66-02V BBY66-05 |
Silicon Tuning Diodes 硅调谐二极管 Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications
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INFINEON[Infineon Technologies AG]
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Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管(Hyperabrupt交界调谐二极管频率线性调谐范 12五) Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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KDV147 KDV147B KDV147C KDV147E |
Silicon diode for FM radio band tuning applications VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(FM RADIO BAND TUNING
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
MMVL809T1 MMVL809T1G |
UHF BAND, 5.3 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN Silicon Tuning Diode
|
ONSEMI[ON Semiconductor]
|
MMVL3102T1 MMVL3102T1_06 MMVL3102T1G MMVL3102T106 |
Silicon Tuning Diode VHF BAND, 22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN
|
ONSEMI[ON Semiconductor]
|
BBY5907 BBY59-02V |
27.8 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SC-79, 2 PIN Silicon Tuning Diode
|
EUPEC GMBH ?CO KG Infineon Technologies AG Infineon Technologies A...
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KDV214 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)
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KEC[KEC(Korea Electronics)]
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